MIMMG150SR170B 1700v 1 5 0 a igb t module r oh s c om pl i a nt fea t ures ultra lo w l o ss high r u g g e dness high s hort circuit c a p a bilit y v c e ( sat) w i th po si ti ve t e mp e ra tu re c oef fi ci ent w i th fa s t free-w h e e l i ng diod e s passivati o n : alpha-s i a n d silico n nitri de p l us pol y i mid e applica t ions inverter conv ertor w elder smps and ups inductio n h eatin g absolut e maximum ra tings t c = 25c u n less other w i se specifi e d t i n u s e u l a v s n o i t i d n o c t s e t r e t e m a r a p l o b m y s igbt v c e s coll ector - emitter v o l t age v g e = 0 v , t v j 2 5 c 170 0 v v ges gate - emitter v o lt age 20 v i c a 0 5 1 t n e r r u c r o t c e l l o c c d i c m peak c o llector current limite d b y t v j max 300 a p tot w 5 2 6 t b g i r e p n o i t a p i s s i d r e w o p t v j c 0 5 1 + o t 0 4 - e g n a r e r u t a r e p m e t n o i t c n u j t stg c 5 2 1 + o t 0 4 - e g n a r e r u t a r e p m e t e g a r o t s v i so l v 0 0 0 3 n i m 1 = t , c a e g a t l o v t s e t n o i t a l u s n i free-wheeling diode v rrm v 0 0 7 1 e g a t l o v e s r e v e r e v i t i t e p e r t c = 25c 1 8 0 rect. 150 a i f( a v ) a vera ge fo r w a rd curre nt t c = 95c 1 8 0 rect. 100 a i f(rms) a 0 1 2 t n e r r u c d r a w r o f s m r t v j = 45c,v r = 0 v ,t= 10ms,sine 1 1 0 0 a i fsm non-r e p e ti tive surge f o r w a rd c u rre nt t v j = 45c,v r = 0 v ,t= 8 .3 ms,sine 120 0 a gs series module
mimmg150sr17 0 b electrical charact e r ist i cs t c = 25c unl ess other w i se specifi ed sy mbol pa rame ter t est condit i o n s min. t y p. max. unit igbt v g e (th) ga te - emitter t h reshold v o l t age v c e = v g e , i c = 10ma 5.3 5.8 6.3 v i c = 150a, v g e =15v , t v j = 25c 2.30 v i c = 150a, v g e =15v , t v j = 125 c 2 . 65 v v c e ( sat ) collector - emitter saturatio n v o l t age i c = 150a, v g e =15v , t v j = 150 c 2 . 75 v v c e = 1700 v , v g e = 0 v , t v j = 25c 0.5 ma v c e = 1700 v , v g e = 0 v , t v j = 125 c 2.5 ma i c e s coll ector l e a k age c u rrent v c e = 1700 v , v g e = 0 v , t v j = 150 c 4.0 ma i ges gate leak age current v c e = 0 v , v g e = 15v , t v j = 125 c -500 500 na q ge gate charge v c e = 900v , i c = 150a , v g e = 15v 0 . 9 c c i e s f n 0 1 e c n a t i c a p a c t u p n i c oes ou tput cap a c i t ance 0 . 53 n f c res revers e t ransfer cap a c i t anc e v c e = 25v , v g e = 0 v , f =1mhz 0 . 37 n f t v j =25c 385 ns t v j =125c 400 n s t d(on) t u rn - on delay t i me t v j =150c 400 n s t v j =25 c 355 n s t v j =125c 365 ns t r rise t i me v c c = 900 v , i c = 150a, r g =16.4 , v g e = 15v , inductive l o ad t v j =150c 365 n s t v j =25c 710 ns t v j =125c 810 n s t d(off) t u rn - o f f delay t i me t v j =150c 840 n s t v j =25 c 320 n s t v j =125c 365 ns t f fall t i me v c c = 900 v , i c = 150a, r g =16.4 , v g e = 15v , inductive l o ad t v j =150c 370 n s t v j =125c 36 mj e on t u rn - on s w itc h i n g ener g y t v j =150c 42 mj t v j =125c 69 mj e o f f t u rn - o f f s w i tchin g ener g y v c c = 900 v , i c = 150a, r g =16.4 , v g e = 15v , inductive l o ad t v j =150c 73 mj i s c short circu it current t p s c 10s , v g e = 15v , t v j = 150c v c c = 130 0 v , v c e mchip 170 0 v 490 a free-wheeling diode i f = 150a , v g e =0v , t v j =25c 2.2 v v f f o r w ard v olt age i f = 150a , v g e =0v , t v j =125c 2.45 v i rrm a 0 3 1 t n e r r u c y r e v o c e r e s r e v e r . x a m q rr c 8 1 e g r a h c y r e v o c e r e s r e v e r e rec revers e reco ver y c har ge i f = 150a , v r = 1000v d i f /d t= -100 0a/ s t v j =125c 25 mj
mimmg150sr17 0 b thermal and mechanica l charac t eristics sy mbol para mete r t est condit i o n s min. t y p. max. unit r thj c junctio n -to-ca se t hermal r e sist ance per igb t 0.20 k / w r thj c d junctio n -to-ca se t hermal r e sist ance per inverse d i ode 0.37 k / w t orque modu le-to-si n k recomme n d e d m6 3 5 n m t orque modu le electro des recomme n d e d m5 2.5 5 n m w e ight 160 g i c (a) 300 200 150 100 50 0 0 1.0 2.0 3.0 4.0 5.0 v c e v f i gure 2 . t y pic a l output charac teristics 5 4 3 2 1 0 6 v c e v f i gure 1 . t y pic a l output charac teristics t v j =125c t v j =25c v g e =15v i c (a) 300 250 200 100 5 0 0 250 t v j =125c 0 150 i c a f i gure 3 . s w itc h in g ener g y vs . collector c u rr ent 450 300 e o n 0 100 200 300 500 e o n e o f f ( mj ) 400 v cc = 900v r g =16. 4 ? v g e = 15v t v j =150c e o f f 200 400 100 150 5 0 0 0 2 0 4 0 60 80 120 e o n e o f f ( mj ) e o n e o f f r g f i gure 4 . s w itc h i n g ener g y vs. gate resistor v cc = 900v i c =150 a v g e = 15v t v j =150c 100 250 300 350 150
mimmg150sr17 0 b q g n c f i gure 5 . ga te char ge char a c teristics t v j =125c t v j =25c t v j = v 100 1 0 1 0 v g e (v) 15 20 5 10 0 200 0 400 600 800 100 0 v c e v f i gure 6 . t y pic a l cap a c i t anc e s vs. v c e c ( n f ) i c =150 a t v j =25c v cc = 900v v cc =1300v v g e =0v f=1mh z c ies c o e s c res 0 5 1 0 1 5 20 25 30 3 5 i c p uls ( a ) t v j =125c v g e =15v 250 200 150 100 50 0 v c e v f i gure 7 . reve r se biase d sa fe opera ting are a 180 0 160 0 120 0 800 400 0 350 300 v f v f i gure 8 . diode fo r w a r d c h a r acteristics 0.5 0 1 . 0 1.5 2.0 3.5 0 5 0 150 250 300 100 i f ( a ) t v j = 125 c t v j =25c 3.0 4.0 e rec ( mj ) i f (a) f i gure 9 . s w itc h in g ener g y vs . i f 300 200 150 100 50 0 250 25 20 15 10 5 0 40 30 35 rect a n gul ar pulse d u ratio n (secon ds) f i gure 10. t ransient t hermal imped ance z thj c ( k/w ) 0.000 1 0 .001 0.01 0.1 1 0.001 0.01 0.1 1 diod e igb t 2.5 200 r g =16. 4 ? v ce = 900v t v j =125c
mimmg150sr17 0 b dimen s ions (mm) f i gure 12. pack age outli ne f i gure 1 1 . c i rcu i t d i agr a m
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